View IRFY9240CM_319028.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Provisional Data Sheet No. PD 9.1295A
HEXFET(R) POWER MOSFET
IRFY9240CM
P-CHANNEL
-200 Volt, 0.51 HEXFET
International Rectifier's HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET power MOSFETs also feature all of the wellestablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET power MOSFET's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves ther mal efficiency and reduces drain capacitance.
Product Summary
Part Number IRFY9240CM BV DSS -200V R DS(on) 0.51 ID -9.4A
Features
n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling
Absolute Maximum Ratings
Parameter
I D @ VGS= -10V, TC = 25C I D @ VGS= -10V, TC = 100C I DM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ Tstg
IRFY9240CM
Units
A W W/K V mJ A mJ V/ns C g
Continuous Drain Current -9.4 Continuous Drain Current -6.0 Pulsed Drain Current -36 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage 20 Single Pulse Avalance Energy 700 Avalance Current -9.4 Repetitive Avalanche Energy 10 Peak Diode Recovery dv/dt -5.5 Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec) Weight 4.3(typical)
* ID current limited by pin diameter
IRFY9240CM Device Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-200 -- -- -- -2.0 4.0 -- -- -- -- 28 3.0 4.5 -- -- -- -- -- --
Typ Max Units
-- -0.20 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 0.51 0.52 -4.0 -- -25 -250 -100 100 60 15 38 35 85 85 65 -- -- V
Test Conditions
VGS = 0V, ID = -1.0mA V/C Reference to 25C, ID = -1.0mA VGS = -10V, ID = -6.0A VGS = -10V, ID = -9.4A V VDS = VGS, I D = -250A S ( ) VDS -15V, IDS = -6.0A VDS = 0.8 x max. rating,VGS = 0V A VDS = 0.8 x max. rating VGS = 0V, TJ = 125C V GS = -20V nA VGS = 20V VGS = -10V, ID = -9.4A nC VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = -100V, ID = -9.4A RG = 9.1, VGS = -10V ns see figure 10
Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances.
I GSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nH
Ciss Coss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1200 570 81
-- -- --
pF
VGS = 0v, VDS = -25V f = 1.0MHz. see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -9.4 -36 -4.6 440 7.2 A
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
V ns C
Tj = 25C, IS = -9.4A, VGS = 0V Tj = 25C, IF = -9.4A, di/dt -100 A/s VDD -50 V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case RthJA Junction-to-Ambient RthCS Case-to-Sink
Min Typ Max Units
-- -- -- -- -- 0.21 1.25 80 K/W --
Test Conditions
Typical socket mount Mounting surface flat, smooth
IRFY9240CM Device
Fig. 1 -- Typical Output Characteristics TC = 25C
Fig. 2 --Typical Output Characteristics TC = 150C
-9.4
Fig. 3 -- Typical Transfer Characteristics
Fig. 4 -- Normalized On-Resistance vs. Temperature
-9.4
Fig. 5 -- Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 -- Typical Gate Charge vs. Gate-to-Source Voltage
IRFY9240CM Device
100
O P E R AT IO N I N T H IS A R E A L IM I T E D B Y R D S(on)
-I D , D rai n C u rre n t (A )
10
100s
1m s
1
TC = 2 5 C T J = 1 5 0 C S ing le P uls e
10 100
10ms
A
1000
-V D S , D ra in -to -S o u rc e V o lta g e (V )
Fig. 7 -- Typical Source-to-Drain Diode Forward Voltage
Fig. 8 -- Maximum Safe Operating Area
10
Negative I D, Drain Current (Amps)
8
6
4
2
0 25 50 75 100 125
A
150
TC , C as e Te m p era tu re (C )
Fig. 9 -- Maximum Drain Current vs. Case Temperature
Fig. 10a -- Switching Time Test Circuit
Fig. 10b -- Switching Time Waveforms
IRFY9240CM Device
10
T he rm al R esponse (Z th J C )
1 D = 0 . 50
0 .2 0 0 .1 0 0.1 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E ( TH E R M A L R E S P O N S E ) 0.01 0.00001
A
0.0001 0.001 0.01 0.1 1
t 1 , R e ctang ular P uls e D uratio n (sec )
Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a -- Unclamped Inductive Test Circuit
Fig. 12b -- Unclamped Inductive Waveforms
E A S , S in g le P uls e A v a la nc h e E ne rgy (m J )
800
600
400
200
0
I = -1 1A V = -50 V
25 50 75 100 125
A
150
S ta rtin g TJ , J un c tion Te m p e ra ture (C )
Fig. 12c -- Max. Avalanche Energy vs. Current
Fig. 13a -- Gate Charge Test Circuit
IRFY9240CM Device
Notes:
Repetitive Rating; Pulse width limited by maximum
junction temperature (see figure 11).
@ VDD = -50V, Starting TJ = 25C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)] Peak IL = -9.4A, VGS = -10V, 25 RG 200 I SD -9.4A, di/dt -150A/s, VDD BVDSS, TJ 150C Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Fig. 13b -- Basic Gate Charge Waveform
Case Outline and Dimensions
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
3 1 2
TO-257AA
NON-STANDARD PIN CONFIGURATION Pin 1 - Gate Pin 2 - Drain Pin 3 - Source Order Part Type IRFY9240C
NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4. Outline conforms to JEDEC outline TO-257AA
CAUTION BERYLLIAWARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice.8/96

▲Up To Search▲

Price & Availability of IRFY9240CM

	To Download IRFY9240CM Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .